Research ArticleOpen Access

Synthesis and Characterization of High Dielectric Constant Material CaCu₃Ti₄O₁₂

Volume 1 - Issue 4

Anshuman Srivastava¹, Om Parkash², Devendra Kumar³ and Pralay Maiti⁴

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- ¹Department of Mechanical Engineering, SIET Allahabad, India
- ^2,3Department of Ceramic Engineering, Indian Institute of Technology, India
- ⁴School of Material Science & Technology, Indian Institute of Technology, India
*Corresponding author: Anshuman Srivastava, Department of Mechanical Engineering, SIET Allahabad, India

Received: September 06, 2017; Published: September 18, 2017

DOI: 10.26717/BJSTR.2017.01.000363

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Abstract

Today a lot of advancement is taking place in electronics industry. This advancement is concomitant with the creation of new materials with high permittivity (called high-k dielectric materials). A higher k dielectric material can store more electric energy than the one with a lower value. As a result, its use in electronic devices reduces the size of the components and improves their efficiency also. As Capacitor is one of the most important components of electronic devices, so lot of research is going on to reduce its size. Traditional BaTiO₃ based ferroelectric materials exhibit high dielectric constant. There is a problem with these materials as these have strong temperature dependence of their dielectric constants near ferro to para electric transition. Therefore, CaCu₃Ti₄O₁₂ (CCTO) has attracted increasing scientific and technological interest because of its giant dielectric constant (εr~10⁴) with weak temperature/frequency dependence in a wide range of temperature (100–600K) and frequency. This suggests its potential application in capacitor based devices. In the present work, Solid state conventional technique was adopted for the synthesis of CaCu₃Ti₄O₁₂ (CCTO), using CuO, TiO₂, and CaCO₃ as starting materials. X-ray diffraction patterns were recorded in an X-ray diffractometer employing Cu-K_α radiation with a Ni-filter. SEM was recorded to analyze the microstructure. Dielectric measurement has been performed using four probe novocontrol set up (ZG4) in a wide range of temperature. It was observed that dielectric constant increases with the increase in temperature and decreases with the increase in frequency. Dielectric loss was found to be quite low.